BSL806NL6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-Channel

Power - Max :

500mW

DS Breakdown Voltage-Min :

20 V

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

20V

Drain-source On Resistance-Max :

0.057 Ω

Number of Terminals :

6

Package :

Bulk

Gate Charge (Qg) (Max) @ Vgs :

1.7nC @ 2.5V

Qualification Status :

Not Qualified

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

2.3A

Rds On (Max) @ Id, Vgs :

57mOhm @ 2.3A, 2.5V

JESD-30 Code :

R-PDSO-G6

Pin Count :

6

Terminal Finish :

MATTE TIN

Feedback Cap-Max (Crss) :

28.6 pF

Power Dissipation-Max (Abs) :

0.5 W

Series :

OptiMOS™

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

Supplier Device Package :

PG-TSOP6-6

Product Status :

Active

FET Feature :

Logic Level Gate

Pbfree Code :

yes

Surface Mount :

yes

Subcategory :

FET General Purpose Power

Operating Temperature :

-55°C ~ 150°C (TJ)

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

FET Type :

2 N-Channel (Dual)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Vgs(th) (Max) @ Id :

750mV @ 11µA

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

259pF @ 10V

Number of Elements :

2

Manufacturer :

Infineon Technologies AG

ECCN Code :

EAR99

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

2.3 A

FET Technology :

METAL-OXIDE SEMICONDUCTOR