BSL806NH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Published :

2013

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

2.3A Ta

ECCN Code :

EAR99

Number of Elements :

2

JESD-609 Code :

e3

FET Feature :

Logic Level Gate, 1.8V Drive

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Max Dual Supply Voltage :

20V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

57m Ω @ 2.3A, 2.5V

Lead Free :

Lead Free

Power - Max :

500mW

Vgs(th) (Max) @ Id :

750mV @ 11µA

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Reference Standard :

AEC-Q101

Gate Charge (Qg) (Max) @ Vgs :

1.7nC @ 2.5V

Number of Pins :

6

Additional Feature :

AVALANCHE RATED

Drain Current-Max (Abs) (ID) :

2.3A

Input Capacitance (Ciss) (Max) @ Vds :

259pF @ 10V

Series :

OptiMOS™

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

2 N-Channel (Dual)

Drain-source On Resistance-Max :

0.057Ohm