BSL802SNH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Feedback Cap-Max (Crss) :

77 pF

Input Capacitance (Ciss) (Max) @ Vds :

1347pF @ 10V

Max Dual Supply Voltage :

20V

Gate Charge (Qg) (Max) @ Vgs :

4.7nC @ 2.5V

Rds On (Max) @ Id, Vgs :

22m Ω @ 7.5A, 2.5V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Published :

2013

Power Dissipation-Max :

2W Ta

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 2.5V

Vgs (Max) :

±8V

Drain-source On Resistance-Max :

0.022Ohm

JESD-30 Code :

R-PDSO-G6

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

7.5A

Number of Terminations :

6

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

OptiMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

8V

FET Type :

N-Channel

Number of Elements :

1

Reference Standard :

AEC-Q101

Current - Continuous Drain (Id) @ 25°C :

7.5A Ta

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Rise Time :

30ns

Mount :

Surface Mount

Halogen Free :

Halogen Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

0.75V @ 30μA