BSH205G2R

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain Current-Max (Abs) (ID) :

2A

DS Breakdown Voltage-Min :

20V

Power Dissipation-Max :

480mW Ta

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 4.5V

Contact Plating :

Tin

Factory Lead Time :

4 Weeks

Terminal Form :

Gull wing

Number of Pins :

3

Rise Time :

14ns

Turn-Off Delay Time :

43 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Continuous Drain Current (ID) :

2A

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

170m Ω @ 2A, 4.5V

Published :

2015

Vgs(th) (Max) @ Id :

950mV @ 250μA

FET Type :

P-Channel

Transistor Application :

SWITCHING

Number of Terminations :

3

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Cut Tape (CT)

Number of Elements :

1

Vgs (Max) :

±8V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

418pF @ 10V

Fall Time (Typ) :

16 ns

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.17Ohm

Drain to Source Voltage (Vdss) :

20V

Pin Count :

3

Turn On Delay Time :

5 ns

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ