BSH202,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

1998

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Height :

6.35mm

Turn-Off Delay Time :

45 ns

Threshold Voltage :

-1.9V

Termination :

SMD/SMT

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

4 Weeks

Operating Temperature :

-55°C~150°C TJ

Length :

6.35mm

Width :

6.35mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

4.5ns

Vgs(th) (Max) @ Id :

1.9V @ 1mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Pins :

3

Contact Plating :

Tin

Mounting Type :

Surface Mount

Number of Terminations :

3

Element Configuration :

Single

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 24V

Dual Supply Voltage :

-30V

Weight :

4.535924g

Nominal Vgs :

-1.9 V

Surface Mount :

yes

Power Dissipation-Max :

417mW Ta

Rds On (Max) @ Id, Vgs :

900m Ω @ 280mA, 10V

Drain Current-Max (Abs) (ID) :

0.52A

Peak Reflow Temperature (Cel) :

260

Max Dual Supply Voltage :

-30V

Resistance :

900mOhm

Turn On Delay Time :

2 ns

Radiation Hardening :

No

Number of Elements :

1

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

30V

Terminal Position :

Dual

Continuous Drain Current (ID) :

-520mA

Vgs (Max) :

±20V

JESD-609 Code :

e3

Fall Time (Typ) :

4.5 ns

Current - Continuous Drain (Id) @ 25°C :

520mA Ta

Transistor Element Material :

SILICON

Power Dissipation :

417mW

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 10V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING