BSH202,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

900m Ω @ 280mA, 10V

Published :

1998

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 24V

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Rise Time :

4.5ns

Element Configuration :

Single

Number of Terminations :

3

Transistor Element Material :

SILICON

Termination :

SMD/SMT

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

417mW Ta

Vgs(th) (Max) @ Id :

1.9V @ 1mA

Dual Supply Voltage :

-30V

Transistor Application :

SWITCHING

Weight :

4.535924g

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

520mA Ta

Threshold Voltage :

-1.9V

JESD-609 Code :

e3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

2 ns

Mounting Type :

Surface Mount

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

30V

Pin Count :

3

Length :

6.35mm

Height :

6.35mm

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Width :

6.35mm

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

45 ns

Radiation Hardening :

No

Terminal Form :

Gull wing

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation :

417mW

Fall Time (Typ) :

4.5 ns

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

0.52A

Nominal Vgs :

-1.9 V

Resistance :

900mOhm

Lead Free :

Lead Free

Vgs (Max) :

±20V

Surface Mount :

yes

FET Type :

P-Channel

Number of Elements :

1

Max Dual Supply Voltage :

-30V

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 10V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

4 Weeks

Continuous Drain Current (ID) :

-520mA