BSH201,215

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

1V @ 1mA (Min)

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 10V

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 160mA, 10V

Number of Pins :

3

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

HTS Code :

8541.21.00.95

Number of Elements :

1

DS Breakdown Voltage-Min :

60V

Input Capacitance (Ciss) (Max) @ Vds :

70pF @ 48V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Power Dissipation :

417mW

FET Type :

P-Channel

Published :

1998

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

6 Weeks

Power Dissipation-Max :

417mW Ta

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

-300mA

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Drain to Source Voltage (Vdss) :

60V