BFN39E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

200mA

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

5V

Number of Pins :

4

Frequency :

100MHz

Transition Frequency :

100MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 30mA 10V

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Voltage (VCEO) :

10V

Power Dissipation :

1.5W

Transistor Type :

PNP

hFE Min :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Published :

2011

Transistor Application :

SWITCHING

Configuration :

Single

Number of Terminations :

4

Package / Case :

TO-261-4, TO-261AA

Collector Base Voltage (VCBO) :

300V

Mount :

Surface Mount

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Case Connection :

COLLECTOR

Collector Emitter Breakdown Voltage :

300V

Max Power Dissipation :

1.5W

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Current - Collector (Ic) (Max) :

200mA

Number of Elements :

1

Polarity/Channel Type :

PNP