BFN39E6327HTSA1
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- Mfr.Part #
- BFN39E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.2A SOT223-4
- Stock
- 1,781
- In Stock ：
- 1,781
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Transition Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 1.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 10V
- Power Dissipation :
- 1.5W
- Collector Base Voltage (VCBO) :
- 300V
- Max Collector Current :
- 200mA
- Number of Terminations :
- 4
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-261-4, TO-261AA
- Collector Emitter Breakdown Voltage :
- 300V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- hFE Min :
- 40
- Terminal Form :
- Gull wing
- Current - Collector (Ic) (Max) :
- 200mA
- Collector Emitter Voltage (VCEO) :
- 10V
- Published :
- 2011
- Transistor Application :
- SWITCHING
- Number of Pins :
- 4
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 100MHz
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BFN39E6327HTSA1
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BFN39E6327HTSA1 Overview
In this device, the DC current gain is 30 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 200mA volts.
BFN39E6327HTSA1 Features
the DC current gain for this device is 30 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BFN39E6327HTSA1 Applications
There are a lot of Infineon Technologies
BFN39E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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