BFN38E6327HTSA1
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- Mfr.Part #
- BFN38E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.2A SOT223-4
- Stock
- 2,129
- In Stock ：
- 2,129
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 10V
- hFE Min :
- 40
- Collector Base Voltage (VCBO) :
- 300V
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Transition Frequency :
- 70MHz
- Collector Emitter Voltage (VCEO) :
- 10V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 200mA
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Frequency :
- 70MHz
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1.5W
- Power Dissipation :
- 1.5W
- Configuration :
- Single
- Max Collector Current :
- 200mA
- Published :
- 2011
- Collector Emitter Breakdown Voltage :
- 300V
- Number of Pins :
- 4
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Case Connection :
- COLLECTOR
- Datasheets
- BFN38E6327HTSA1
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BFN38E6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 30mA 10V.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 70MHz.A maximum collector current of 200mA volts can be achieved.
BFN38E6327HTSA1 Features
the DC current gain for this device is 30 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
a transition frequency of 70MHz
BFN38E6327HTSA1 Applications
There are a lot of Infineon Technologies
BFN38E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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