BFN38E6327HTSA1
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- Mfr.Part #
- BFN38E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.2A SOT223-4
- Stock
- 2,129
- In Stock ：
- 2,129
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 4
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 70MHz
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 10V
- Configuration :
- Single
- Frequency :
- 70MHz
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-261-4, TO-261AA
- Collector Emitter Breakdown Voltage :
- 300V
- Transistor Application :
- SWITCHING
- Published :
- 2011
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.5W
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 10V
- Number of Pins :
- 4
- Current - Collector (Ic) (Max) :
- 200mA
- Max Collector Current :
- 200mA
- hFE Min :
- 40
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 300V
- Max Power Dissipation :
- 1.5W
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Datasheets
- BFN38E6327HTSA1
BFN38E6327HTSA1 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BFN38E6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 30mA 10V.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 70MHz.A maximum collector current of 200mA volts can be achieved.
BFN38E6327HTSA1 Features
the DC current gain for this device is 30 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
a transition frequency of 70MHz
BFN38E6327HTSA1 Applications
There are a lot of Infineon Technologies
BFN38E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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