BFN39H6327XTSA1
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- Mfr.Part #
- BFN39H6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.2A SOT223-4
- Stock
- 23,797
- In Stock ：
- 23,797
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 200mA
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 300V
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Collector Base Voltage (VCBO) :
- 300V
- Transition Frequency :
- 100MHz
- Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 10V
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-261-4, TO-261AA
- Frequency - Transition :
- 100MHz
- Case Connection :
- COLLECTOR
- Power - Max :
- 1.5W
- Max Power Dissipation :
- 1.5W
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- hFE Min :
- 30
- Number of Terminations :
- 4
- Published :
- 2011
- Factory Lead Time :
- 6 Weeks
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 10V
- Datasheets
- BFN39H6327XTSA1
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BFN39H6327XTSA1 Overview
In this device, the DC current gain is 30 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.100MHz is present in the transition frequency.Maximum collector currents can be below 200mA volts.
BFN39H6327XTSA1 Features
the DC current gain for this device is 30 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
a transition frequency of 100MHz
BFN39H6327XTSA1 Applications
There are a lot of Infineon Technologies
BFN39H6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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