BF998WR,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Frequency :

200MHz

RoHS Status :

ROHS3 Compliant

Current - Test :

10mA

HTS Code :

8541.21.00.75

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

N-Channel Dual Gate

Voltage - Rated :

12V

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Package / Case :

SC-82A, SOT-343

Case Connection :

SOURCE

Base Part Number :

BF998

Additional Feature :

LOW NOISE

Number of Terminations :

4

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Operating Mode :

DUAL GATE, DEPLETION MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature (Max) :

150°C

DS Breakdown Voltage-Min :

12V

Number of Elements :

1

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Noise Figure :

0.6dB

Voltage - Test :

8V

JESD-30 Code :

R-PDSO-G4

Drain Current-Max (Abs) (ID) :

0.03A

Packaging :

Tape and Reel (TR)

Power Dissipation-Max (Abs) :

0.3W

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

4

Current Rating (Amps) :

30mA

Terminal Finish :

Tin (Sn)

Published :

1995

ECCN Code :

EAR99