BF991,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Noise Figure :

0.7dB

Transistor Application :

AMPLIFIER

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Gain :

29dB

JESD-30 Code :

R-PDSO-G4

Transistor Element Material :

SILICON

Surface Mount :

yes

Voltage - Rated :

20V

HTS Code :

8541.21.00.75

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-253-4, TO-253AA

Frequency :

100MHz

Published :

1996

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

0.02A

Qualification Status :

Not Qualified

Current Rating (Amps) :

20mA

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Voltage - Test :

10V

Transistor Type :

N-Channel Dual Gate

Case Connection :

SOURCE

Base Part Number :

BF991

DS Breakdown Voltage-Min :

20V

Current - Test :

10mA

Number of Elements :

1

Power Dissipation-Max (Abs) :

0.2W

Operating Temperature (Max) :

150°C

Pin Count :

4

RoHS Status :

ROHS3 Compliant

Operating Mode :

DUAL GATE, DEPLETION MODE