BF991,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-253-4, TO-253AA

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Noise Figure :

0.7dB

Time@Peak Reflow Temperature-Max (s) :

40

Published :

1996

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

Power Dissipation-Max (Abs) :

0.2W

Number of Elements :

1

Pin Count :

4

Surface Mount :

yes

DS Breakdown Voltage-Min :

20V

Frequency :

100MHz

Terminal Form :

Gull wing

Operating Temperature (Max) :

150°C

Voltage - Rated :

20V

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

0.02A

Number of Terminations :

4

Gain :

29dB

Base Part Number :

BF991

Operating Mode :

DUAL GATE, DEPLETION MODE

Transistor Type :

N-Channel Dual Gate

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Test :

10mA

Current Rating (Amps) :

20mA

Case Connection :

SOURCE

Packaging :

Tape and Reel (TR)

HTS Code :

8541.21.00.75

Voltage - Test :

10V