BF996S,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

DS Breakdown Voltage-Min :

20V

ECCN Code :

EAR99

Published :

1996

Drain Current-Max (Abs) (ID) :

0.03A

Voltage - Rated :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

HTS Code :

8541.21.00.75

RoHS Status :

ROHS3 Compliant

Noise Figure :

1dB

JESD-30 Code :

R-PDSO-G4

Pin Count :

4

Operating Temperature (Max) :

150°C

Case Connection :

SOURCE

Transistor Element Material :

SILICON

Current - Test :

10mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

DUAL GATE, DEPLETION MODE

Power Dissipation-Max (Abs) :

0.2W

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

13 Weeks

Transistor Application :

AMPLIFIER

Frequency :

200MHz

Gain :

25dB

Current Rating (Amps) :

30mA

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Voltage - Test :

15V

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Number of Terminations :

4

Package / Case :

TO-253-4, TO-253AA

Transistor Type :

N-Channel Dual Gate

Number of Elements :

1

Base Part Number :

BF996