BF998E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - RF

Input Capacitance :

1.2pF

Frequency :

45MHz

Mount :

Surface Mount

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

8V

Factory Lead Time :

4 Weeks

Packaging :

Tape and Reel (TR)

Current - Test :

10mA

Number of Channels :

1

Max Operating Temperature :

150°C

Terminal Position :

Dual

ECCN Code :

EAR99

Gain :

28dB

Configuration :

Single

Max Power Dissipation :

200mW

Drain Current-Max (Abs) (ID) :

0.03A

Published :

2001

Package / Case :

TO-253-4, TO-253AA

Min Operating Temperature :

-55°C

Contact Plating :

Tin

Current Rating :

30mA

Continuous Drain Current (ID) :

30mA

Transistor Type :

N-Channel

Number of Elements :

1

Base Part Number :

BF998

Pin Count :

4

Length :

2.9mm

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.3mm

Voltage - Rated DC :

12V

Pbfree Code :

yes

Halogen Free :

Not Halogen Free

Noise Figure :

2.8dB

Number of Terminations :

4

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Case Connection :

SOURCE

Operating Mode :

DUAL GATE, DEPLETION MODE

Number of Pins :

4

Lead Free :

Lead Free

Height :

1mm