BF720T1G
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- Mfr.Part #
- BF720T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.1A SOT223
- Stock
- 12,591
- In Stock ：
- 12,591
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 300V
- Number of Pins :
- 4
- hFE Min :
- 50
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 30mA
- Gain Bandwidth Product :
- 60MHz
- Number of Terminations :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Frequency :
- 60MHz
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Length :
- 6.7mm
- Pin Count :
- 4
- Collector Emitter Voltage (VCEO) :
- 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Max Breakdown Voltage :
- 300V
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Terminal Position :
- Dual
- Power Dissipation :
- 1.5W
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Published :
- 2006
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 8 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 3.7mm
- Collector Base Voltage (VCBO) :
- 300V
- Height :
- 1.65mm
- Max Power Dissipation :
- 1.5W
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 600mV
- Packaging :
- Cut Tape (CT)
- Base Part Number :
- BF720
- Type :
- GENERAL PURPOSE
- Transition Frequency :
- 60MHz
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -65°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Package / Case :
- TO-261-4, TO-261AA
- Max Collector Current :
- 100mA
- Current Rating :
- 100mA
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 300V
- Datasheets
- BF720T1G
BF720T1G Documents
NPN -65°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
BF720T1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 25mA 20V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 30mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 60MHz.The breakdown input voltage is 300V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BF720T1G Features
the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 60MHz
BF720T1G Applications
There are a lot of ON Semiconductor
BF720T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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