BF720T1G
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- Mfr.Part #
- BF720T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.1A SOT223
- Stock
- 12,591
- In Stock ：
- 12,591
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Length :
- 6.7mm
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 60MHz
- Current Rating :
- 100mA
- Number of Terminations :
- 4
- Case Connection :
- COLLECTOR
- Contact Plating :
- Tin
- Power Dissipation :
- 1.5W
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- BF720
- Package / Case :
- TO-261-4, TO-261AA
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- hFE Min :
- 50
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Cut Tape (CT)
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 300V
- Pin Count :
- 4
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 300V
- Width :
- 3.7mm
- Transition Frequency :
- 60MHz
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 300V
- Frequency :
- 60MHz
- Type :
- GENERAL PURPOSE
- Published :
- 2006
- Operating Temperature :
- -65°C~150°C TJ
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Height :
- 1.65mm
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 30mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Voltage - Rated DC :
- 300V
- Max Collector Current :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 4
- Max Power Dissipation :
- 1.5W
- Collector Emitter Voltage (VCEO) :
- 300V
- Collector Emitter Saturation Voltage :
- 600mV
- Datasheets
- BF720T1G
NPN -65°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
BF720T1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 25mA 20V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 30mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 60MHz.The breakdown input voltage is 300V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BF720T1G Features
the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 60MHz
BF720T1G Applications
There are a lot of ON Semiconductor
BF720T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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