BF720,115
- Mfr.Part #
- BF720,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.1A SOT223
- Stock
- 2,630
- In Stock :
- 2,630
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 60MHz
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- BF720
- hFE Min :
- 50
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Forward Voltage :
- 1.1V
- Package / Case :
- TO-261-4, TO-261AA
- Width :
- 6.35mm
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 300V
- ECCN Code :
- EAR99
- Max Forward Surge Current (Ifsm) :
- 4.5A
- Power Dissipation :
- 1.2W
- Emitter Base Voltage (VEBO) :
- 5V
- Reverse Recovery Time :
- 50 ns
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Height :
- 6.35mm
- Length :
- 6.35mm
- Number of Terminations :
- 4
- Forward Current :
- 140mA
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 300V
- RoHS Status :
- ROHS3 Compliant
- Max Repetitive Reverse Voltage (Vrrm) :
- 300V
- Pin Count :
- 4
- Series :
- Automotive, AEC-Q101
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Transition Frequency :
- 60MHz
- VCEsat-Max :
- 0.6 V
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Max Power Dissipation :
- 1.2W
- Max Breakdown Voltage :
- 300V
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Weight :
- 4.535924g
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 30mA
- Published :
- 2009
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- Number of Pins :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Frequency :
- 60MHz
- Collector Emitter Voltage (VCEO) :
- 300V
- Datasheets
- BF720,115

NPN 150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BF720,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 25mA 20V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 30mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 60MHz.The breakdown input voltage is 300V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BF720,115 Features
the DC current gain for this device is 50 @ 25mA 20V
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
a transition frequency of 60MHz
BF720,115 Applications
There are a lot of Nexperia USA Inc.
BF720,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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