BF720T1
- Mfr.Part #
- BF720T1
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100MA 300V SOT223
- Stock
- 1,579
- In Stock :
- 1,579
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Voltage (VCEO) :
- 300V
- Gain Bandwidth Product :
- 60MHz
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Pin Count :
- 4
- Collector Emitter Breakdown Voltage :
- 300V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- hFE Min :
- 50
- Base Part Number :
- BF720
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 300V
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2006
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Frequency :
- 60MHz
- Pbfree Code :
- yes
- Max Power Dissipation :
- 1.5W
- Packaging :
- Cut Tape (CT)
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Number of Pins :
- 4
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-261-4, TO-261AA
- Max Breakdown Voltage :
- 300V
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 300V
- Current Rating :
- 100mA
- Height :
- 1.65mm
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 4
- Power Dissipation :
- 1.5W
- Transition Frequency :
- 60MHz
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 600mV
- Surface Mount :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Width :
- 3.7mm
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 30mA
- Terminal Position :
- Dual
- Type :
- GENERAL PURPOSE
- Length :
- 6.7mm
- Max Collector Current :
- 100mA
- Datasheets
- BF720T1

NPN -65°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
BF720T1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 25mA 20V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 30mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 60MHz.The breakdown input voltage is 300V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BF720T1G Features
the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 30mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 60MHz
BF720T1G Applications
There are a lot of ON Semiconductor
BF720T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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