BDW94CFTU
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- Mfr.Part #
- BDW94CFTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 12A TO220F-3
- Stock
- 3,250
- In Stock ：
- 3,250
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Max Collector Current :
- 12A
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Saturation Voltage :
- 2V
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- hFE Min :
- 1000
- Emitter Base Voltage (VEBO) :
- 2.5V
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 5A 3V
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 80W
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 100mA, 10A
- Published :
- 2005
- Mounting Type :
- Through Hole
- Height :
- 15.95mm
- Current Rating :
- -12A
- Voltage - Rated DC :
- -100V
- Power - Max :
- 80W
- Collector Emitter Voltage (VCEO) :
- 100V
- Length :
- 9.9mm
- Element Configuration :
- Single
- Transistor Type :
- PNP - Darlington
- Package / Case :
- TO-220-3 Full Pack
- Width :
- 4.5mm
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 1mA
- Collector Base Voltage (VCBO) :
- -100V
- Packaging :
- Tube
- Polarity :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Application :
- SWITCHING
- Weight :
- 2.27g
- Base Part Number :
- BDW94
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 100V
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- BDW94CFTU
PNP - Darlington 150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Full Pack Tube Through Hole
BDW94CFTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 5A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 100mA, 10A.The emitter base voltage can be kept at 2.5V for high efficiency.The current rating of this fuse is -12A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 12A volts at Single BJT transistors maximum.
BDW94CFTU Features
the DC current gain for this device is 750 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 2.5V
the current rating of this device is -12A
BDW94CFTU Applications
There are a lot of ON Semiconductor
BDW94CFTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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