BDW93B-S

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Mfr.Part #
BDW93B-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 12A TO220
Stock
5,535
In Stock :
5,535

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Published :
1993
Collector Emitter Saturation Voltage :
2V
Emitter Base Voltage (VEBO) :
5V
JEDEC-95 Code :
TO-220AB
Collector Emitter Breakdown Voltage :
80V
Transistor Element Material :
SILICON
Packaging :
Tube
Mount :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
3V @ 100mA, 10A
Number of Terminations :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 5A 3V
Current - Collector Cutoff (Max) :
1mA
Pbfree Code :
yes
Case Connection :
COLLECTOR
Collector Base Voltage (VCBO) :
80V
Polarity :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Package / Case :
TO-220-3
Pin Count :
3
Base Part Number :
BDW93
Radiation Hardening :
No
Element Configuration :
Single
JESD-30 Code :
R-PSFM-T3
Operating Temperature :
-65°C~150°C TJ
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Power - Max :
2W
Terminal Finish :
TIN SILVER COPPER
Max Power Dissipation :
2W
Transistor Type :
NPN - Darlington
JESD-609 Code :
e1
Max Collector Current :
12A
Collector Emitter Voltage (VCEO) :
80V
Datasheets
BDW93B-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BDW93B-S from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Base Part Number:BDW93, Operating Temperature:-65°C~150°C TJ, BDW93B-S pinout, BDW93B-S datasheet PDF, BDW93B-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BDW93B-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BDW93B-S


NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDW93B-S Overview


This device has a DC current gain of 750 @ 5A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.The maximum collector current is 12A volts.

BDW93B-S Features


the DC current gain for this device is 750 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V


BDW93B-S Applications


There are a lot of Bourns Inc.
BDW93B-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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