BDW93CTU

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Mfr.Part #
BDW93CTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 100V 12A TO220-3
Stock
26,805
In Stock :
26,805

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Terminations :
3
Weight :
1.8g
Qualification Status :
Not Qualified
Element Configuration :
Single
Number of Elements :
1
Height :
9.4mm
hFE Min :
1000
Collector Base Voltage (VCBO) :
100V
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 5A 3V
Lead Free :
Lead Free
Collector Emitter Breakdown Voltage :
100V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
8 Weeks
Mount :
Through Hole
Transistor Element Material :
SILICON
Published :
2000
Vce Saturation (Max) @ Ib, Ic :
3V @ 100mA, 10A
Base Part Number :
BDW93
Length :
10.1mm
Current Rating :
12A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tube
Width :
4.7mm
JESD-609 Code :
e3
Package / Case :
TO-220-3
Max Collector Current :
12A
Pbfree Code :
yes
Mounting Type :
Through Hole
Voltage - Rated DC :
100V
Number of Pins :
3
Max Power Dissipation :
80W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
100V
Operating Temperature :
150°C TJ
Emitter Base Voltage (VEBO) :
12V
Contact Plating :
Tin
Polarity :
NPN
Current - Collector Cutoff (Max) :
1mA
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Collector Emitter Saturation Voltage :
2V
JEDEC-95 Code :
TO-220AB
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Transistor Type :
NPN - Darlington
Datasheets
BDW93CTU
Introducing Transistors - Bipolar (BJT) - Single onsemi BDW93CTU from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Base Part Number:BDW93, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:150°C TJ, BDW93CTU pinout, BDW93CTU datasheet PDF, BDW93CTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDW93CTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDW93CTU


NPN - Darlington 150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDW93CTU Overview


DC current gain in this device equals 750 @ 5A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 100mA, 10A.An emitter's base voltage can be kept at 12V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 12A current rating.In extreme cases, the collector current can be as low as 12A volts.

BDW93CTU Features


the DC current gain for this device is 750 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 12V
the current rating of this device is 12A


BDW93CTU Applications


There are a lot of ON Semiconductor
BDW93CTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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