BDW63A-S

Manufacturer :

Bourns, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-220-3

Transistor Type :

NPN - Darlington

Mount :

Through Hole

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Breakdown Voltage :

60V

ECCN Code :

EAR99

Packaging :

Tube

Emitter Base Voltage (VEBO) :

5V

Polarity :

NPN

Mounting Type :

Through Hole

Current - Collector Cutoff (Max) :

500μA

Max Power Dissipation :

2W

Collector Base Voltage (VCBO) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

2W

Transistor Application :

SWITCHING

Published :

1993

Radiation Hardening :

No

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Terminal Finish :

TIN SILVER COPPER

Max Collector Current :

6A

Pin Count :

3

Collector Emitter Saturation Voltage :

2.5V

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

JESD-609 Code :

e1

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 2A 3V

Base Part Number :

BDW63

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

60V

Vce Saturation (Max) @ Ib, Ic :

4V @ 60mA, 6A