BDW64D-S

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Mfr.Part #
BDW64D-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP DARL 120V 6A TO220
Stock
6,389
In Stock :
6,389

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
JEDEC-95 Code :
TO-220AB
Polarity :
PNP
Vce Saturation (Max) @ Ib, Ic :
4V @ 60mA, 6A
Transistor Application :
SWITCHING
Collector Emitter Breakdown Voltage :
120V
Terminal Finish :
TIN SILVER COPPER
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A 3V
Collector Emitter Saturation Voltage :
2.5V
RoHS Status :
ROHS3 Compliant
Collector Emitter Voltage (VCEO) :
120V
JESD-30 Code :
R-PSFM-T3
Collector Base Voltage (VCBO) :
120V
Case Connection :
COLLECTOR
Emitter Base Voltage (VEBO) :
5V
Max Power Dissipation :
2W
Transistor Element Material :
SILICON
Pbfree Code :
yes
Radiation Hardening :
No
Base Part Number :
BDW64
Mount :
Through Hole
Operating Temperature :
-65°C~150°C TJ
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
500μA
Packaging :
Tube
Pin Count :
3
Max Collector Current :
6A
Power - Max :
2W
Published :
1993
Package / Case :
TO-220-3
JESD-609 Code :
e1
Number of Elements :
1
Number of Terminations :
3
Transistor Type :
PNP - Darlington
Element Configuration :
Single
Datasheets
BDW64D-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BDW64D-S from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:BDW64, Operating Temperature:-65°C~150°C TJ, Package / Case:TO-220-3, Number of Terminations:3, BDW64D-S pinout, BDW64D-S datasheet PDF, BDW64D-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BDW64D-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BDW64D-S


PNP - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDW64D-S Overview


In this device, the DC current gain is 750 @ 2A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 60mA, 6A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.

BDW64D-S Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 60mA, 6A
the emitter base voltage is kept at 5V


BDW64D-S Applications


There are a lot of Bourns Inc.
BDW64D-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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