BDW64D-S
- Mfr.Part #
- BDW64D-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 120V 6A TO220
- Stock
- 6,389
- In Stock :
- 6,389
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Polarity :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 60mA, 6A
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 120V
- Terminal Finish :
- TIN SILVER COPPER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Collector Emitter Saturation Voltage :
- 2.5V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 120V
- JESD-30 Code :
- R-PSFM-T3
- Collector Base Voltage (VCBO) :
- 120V
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 2W
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Base Part Number :
- BDW64
- Mount :
- Through Hole
- Operating Temperature :
- -65°C~150°C TJ
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 500μA
- Packaging :
- Tube
- Pin Count :
- 3
- Max Collector Current :
- 6A
- Power - Max :
- 2W
- Published :
- 1993
- Package / Case :
- TO-220-3
- JESD-609 Code :
- e1
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Transistor Type :
- PNP - Darlington
- Element Configuration :
- Single
- Datasheets
- BDW64D-S

PNP - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDW64D-S Overview
In this device, the DC current gain is 750 @ 2A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 60mA, 6A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
BDW64D-S Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 60mA, 6A
the emitter base voltage is kept at 5V
BDW64D-S Applications
There are a lot of Bourns Inc.
BDW64D-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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