BDW63B-S
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- Mfr.Part #
- BDW63B-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 6A TO220
- Stock
- 13,497
- In Stock ：
- 13,497
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 2.5V
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 80V
- Case Connection :
- COLLECTOR
- Base Part Number :
- BDW63
- Max Power Dissipation :
- 2W
- JESD-609 Code :
- e1
- Transistor Type :
- NPN - Darlington
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 500μA
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~150°C TJ
- Pin Count :
- 3
- Package / Case :
- TO-220-3
- Number of Elements :
- 1
- Power - Max :
- 2W
- Max Collector Current :
- 6A
- Transistor Application :
- SWITCHING
- Published :
- 1993
- Mounting Type :
- Through Hole
- Terminal Finish :
- TIN SILVER COPPER
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Polarity :
- NPN
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSFM-T3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Collector Emitter Breakdown Voltage :
- 80V
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 80V
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 60mA, 6A
- Datasheets
- BDW63B-S
NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDW63B-S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 2A 3V DC current gain.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 6A volts.
BDW63B-S Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 60mA, 6A
the emitter base voltage is kept at 5V
BDW63B-S Applications
There are a lot of Bourns Inc.
BDW63B-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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