BDW47G

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Mfr.Part #
BDW47G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP DARL 100V 15A TO220
Stock
5,500
In Stock :
5,500

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transition Frequency :
4MHz
Collector Base Voltage (VCBO) :
100V
Transistor Type :
PNP - Darlington
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
15A
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Height :
6.35mm
Frequency - Transition :
4MHz
Package / Case :
TO-220-3
Transistor Application :
SWITCHING
Weight :
4.535924g
Packaging :
Tube
JEDEC-95 Code :
TO-220AB
Factory Lead Time :
2 Weeks
Length :
6.35mm
Vce Saturation (Max) @ Ib, Ic :
3V @ 50mA, 10A
Contact Plating :
Tin
Collector Emitter Breakdown Voltage :
100V
Pin Count :
3
ECCN Code :
EAR99
Polarity :
PNP
Radiation Hardening :
No
Element Configuration :
Single
REACH SVHC :
No SVHC
Number of Elements :
1
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
40
Current - Collector Cutoff (Max) :
2mA
Current Rating :
-15A
Published :
2004
Width :
6.35mm
Voltage - Rated DC :
-100V
Lead Free :
Lead Free
Power Dissipation :
85W
Pbfree Code :
yes
Surface Mount :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 5A 4V
Collector Emitter Saturation Voltage :
2V
Max Power Dissipation :
85W
Mounting Type :
Through Hole
Case Connection :
COLLECTOR
Continuous Collector Current :
15A
Number of Terminations :
3
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
100V
RoHS Status :
ROHS3 Compliant
Emitter Base Voltage (VEBO) :
5V
Peak Reflow Temperature (Cel) :
260
Datasheets
BDW47G
Introducing Transistors - Bipolar (BJT) - Single onsemi BDW47G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, BDW47G pinout, BDW47G datasheet PDF, BDW47G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDW47G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDW47G


PNP - Darlington -55°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDW47G Overview


DC current gain in this device equals 1000 @ 5A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 50mA, 10A.Single BJT transistor is essential to maintain the continuous collector voltage at 15A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -15A current rating.As a result, the part has a transition frequency of 4MHz.In extreme cases, the collector current can be as low as 15A volts.

BDW47G Features


the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 50mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 4MHz


BDW47G Applications


There are a lot of ON Semiconductor
BDW47G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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