BDW47
- Mfr.Part #
- BDW47
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 15A TO220
- Stock
- 1,392
- In Stock :
- 1,392
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 15A
- Continuous Collector Current :
- 15A
- Peak Reflow Temperature (Cel) :
- 260
- Frequency - Transition :
- 4MHz
- Number of Elements :
- 1
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.35mm
- Current Rating :
- -15A
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- -100V
- Collector Emitter Saturation Voltage :
- 2V
- Current - Collector Cutoff (Max) :
- 2mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 4MHz
- Radiation Hardening :
- No
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Width :
- 6.35mm
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Polarity :
- PNP
- Collector Emitter Breakdown Voltage :
- 100V
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Published :
- 2004
- Transistor Type :
- PNP - Darlington
- Weight :
- 4.535924g
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 85W
- Surface Mount :
- No
- JEDEC-95 Code :
- TO-220AB
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 50mA, 10A
- Factory Lead Time :
- 2 Weeks
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Height :
- 6.35mm
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 85W
- Collector Emitter Voltage (VCEO) :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Datasheets
- BDW47

PNP - Darlington -55°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDW47G Overview
DC current gain in this device equals 1000 @ 5A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 50mA, 10A.Single BJT transistor is essential to maintain the continuous collector voltage at 15A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -15A current rating.As a result, the part has a transition frequency of 4MHz.In extreme cases, the collector current can be as low as 15A volts.
BDW47G Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 50mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 4MHz
BDW47G Applications
There are a lot of ON Semiconductor
BDW47G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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