BDW42G
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- Mfr.Part #
- BDW42G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 15A TO220
- Stock
- 1,573
- In Stock ：
- 1,573
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 100V
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 4.83mm
- Current Rating :
- 15A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- JEDEC-95 Code :
- TO-220AB
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 15.75mm
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Collector Current :
- 15A
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 6.000006g
- Frequency - Transition :
- 4MHz
- REACH SVHC :
- No SVHC
- Surface Mount :
- No
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- Factory Lead Time :
- 2 Weeks
- Polarity :
- NPN
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 2V
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 85W
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Power Dissipation :
- 85W
- Number of Terminations :
- 3
- Published :
- 2004
- Length :
- 10.53mm
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 50mA, 10A
- Continuous Collector Current :
- 15A
- Transition Frequency :
- 4MHz
- Current - Collector Cutoff (Max) :
- 2mA
- Transistor Element Material :
- SILICON
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Case Connection :
- COLLECTOR
- Transistor Type :
- NPN - Darlington
- Number of Elements :
- 1
- Datasheets
- BDW42G
NPN - Darlington -55°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDW42G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 5A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 50mA, 10A.Single BJT transistor is recommended to keep the continuous collector voltage at 15A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 4MHz.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
BDW42G Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 50mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 4MHz
BDW42G Applications
There are a lot of ON Semiconductor
BDW42G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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