BDW23BTU
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- Mfr.Part #
- BDW23BTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 6A TO220-3
- Stock
- 12,561
- In Stock ：
- 12,561
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 500μA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Base Part Number :
- BDW23
- Packaging :
- Tube
- Supplier Device Package :
- TO-220-3
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 6A
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 60mA, 6A
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Operating Temperature :
- 150°C TJ
- Power - Max :
- 50W
- Package / Case :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Datasheets
- BDW23BTU
NPN 150°C TJ 500μA TO-220-3 Tube Through Hole
BDW23BTU Overview
In this device, the DC current gain is 750 @ 2A 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 60mA, 6A.Product comes in the supplier's device package TO-220-3.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
BDW23BTU Features
the DC current gain for this device is 750 @ 2A 3V
the vce saturation(Max) is 3V @ 60mA, 6A
the supplier device package of TO-220-3
BDW23BTU Applications
There are a lot of ON Semiconductor
BDW23BTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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