BDW23ATU

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Mfr.Part #
BDW23ATU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 60V 6A TO220-3
Stock
49,972
In Stock :
49,972

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
TO-220-3
Packaging :
Tube
Vce Saturation (Max) @ Ib, Ic :
3V @ 60mA, 6A
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A 3V
Operating Temperature :
150°C TJ
Base Part Number :
BDW23
Current - Collector (Ic) (Max) :
6A
Voltage - Collector Emitter Breakdown (Max) :
60V
Current - Collector Cutoff (Max) :
500μA
Package / Case :
TO-220-3
Mounting Type :
Through Hole
Transistor Type :
NPN
Power - Max :
50W
Datasheets
BDW23ATU
Introducing Transistors - Bipolar (BJT) - Single onsemi BDW23ATU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Base Part Number:BDW23, Package / Case:TO-220-3, Mounting Type:Through Hole, BDW23ATU pinout, BDW23ATU datasheet PDF, BDW23ATU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDW23ATU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDW23ATU


NPN 150°C TJ 500μA TO-220-3 Tube Through Hole

BDW23ATU Overview


DC current gain in this device equals 750 @ 2A 3V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 60mA, 6A.Product comes in TO-220-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

BDW23ATU Features


the DC current gain for this device is 750 @ 2A 3V
the vce saturation(Max) is 3V @ 60mA, 6A
the supplier device package of TO-220-3


BDW23ATU Applications


There are a lot of ON Semiconductor
BDW23ATU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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