BDW23CTU

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Mfr.Part #
BDW23CTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 100V 6A TO220-3
Stock
34,658
In Stock :
34,658

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-220-3
Transistor Type :
NPN
Operating Temperature :
150°C TJ
Power - Max :
50W
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 2A 3V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
500μA
Packaging :
Tube
Base Part Number :
BDW23
Vce Saturation (Max) @ Ib, Ic :
3V @ 60mA, 6A
Voltage - Collector Emitter Breakdown (Max) :
100V
Current - Collector (Ic) (Max) :
6A
Datasheets
BDW23CTU
Introducing Transistors - Bipolar (BJT) - Single onsemi BDW23CTU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Base Part Number:BDW23, BDW23CTU pinout, BDW23CTU datasheet PDF, BDW23CTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDW23CTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDW23CTU


NPN 150°C TJ 500μA TO-220-3 Tube Through Hole

BDW23CTU Overview


In this device, the DC current gain is 750 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 60mA, 6A.The device exhibits a collector-emitter breakdown at 100V.

BDW23CTU Features


the DC current gain for this device is 750 @ 2A 3V
the vce saturation(Max) is 3V @ 60mA, 6A


BDW23CTU Applications


There are a lot of ON Semiconductor
BDW23CTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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