BD682TG
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- Mfr.Part #
- BD682TG
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 4A TO126
- Stock
- 27,486
- In Stock ：
- 27,486
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-225AA, TO-126-3
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP - Darlington
- Polarity :
- PNP
- Packaging :
- Tube
- Base Part Number :
- BD682
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 4A
- Collector Base Voltage (VCBO) :
- 100V
- Max Power Dissipation :
- 40W
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Voltage - Rated DC :
- -100V
- Current Rating :
- -4A
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Collector Emitter Saturation Voltage :
- 2.5V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Surface Mount :
- No
- Collector Emitter Voltage (VCEO) :
- 100V
- Power - Max :
- 40W
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Reach Compliance Code :
- Unknown
- Number of Elements :
- 1
- Number of Pins :
- 3
- Published :
- 2008
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 100V
- Lead Free :
- Lead Free
- hFE Min :
- 750
- Current - Collector Cutoff (Max) :
- 500μA
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- BD682TG
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PNP - Darlington -55°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD682TG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 750 @ 1.5A 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 30mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 4A volts.
BD682TG Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
BD682TG Applications
There are a lot of ON Semiconductor
BD682TG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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