BD681STU
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- Mfr.Part #
- BD681STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 4A TO126-3
- Stock
- 19,852
- In Stock ：
- 19,852
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Factory Lead Time :
- 19 Weeks
- Collector Emitter Saturation Voltage :
- 2.5V
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Weight :
- 761mg
- Width :
- 3.25mm
- Contact Plating :
- Tin
- Max Collector Current :
- 4A
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 100V
- Published :
- 2000
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 100V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Collector Emitter Voltage (VCEO) :
- 100V
- Base Part Number :
- BD681
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Transistor Type :
- NPN - Darlington
- Package / Case :
- TO-225AA, TO-126-3
- Packaging :
- Tube
- Height :
- 11mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Current - Collector Cutoff (Max) :
- 500μA
- hFE Min :
- 750
- Length :
- 8mm
- Current Rating :
- 4A
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity :
- NPN
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Voltage - Rated DC :
- 100V
- Radiation Hardening :
- No
- Transition Frequency :
- 10MHz
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Continuous Collector Current :
- 4A
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 40W
- Datasheets
- BD681STU
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
BD681STU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 750 @ 1.5A 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 30mA, 1.5A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 10MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
BD681STU Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz
BD681STU Applications
There are a lot of ON Semiconductor
BD681STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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