BD649-S
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- Mfr.Part #
- BD649-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A TO220
- Stock
- 43,487
- In Stock ：
- 43,487
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Width :
- 4.7mm
- Base Part Number :
- BD649
- Max Power Dissipation :
- 2W
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 50mA, 5A
- Length :
- 10.4mm
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Power Dissipation :
- 62.5W
- Element Configuration :
- Single
- JESD-609 Code :
- e1
- hFE Min :
- 750
- Pin Count :
- 3
- Power - Max :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Number of Terminations :
- 3
- Polarity :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Transistor Type :
- NPN - Darlington
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- Terminal Finish :
- TIN SILVER COPPER
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Saturation Voltage :
- 2V
- Collector Emitter Breakdown Voltage :
- 100V
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 1993
- Current - Collector Cutoff (Max) :
- 500μA
- Collector Base Voltage (VCBO) :
- 120V
- Case Connection :
- COLLECTOR
- Height :
- 9.3mm
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3
- Max Collector Current :
- 8A
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- BD649-S
BD649-S Documents
NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BD649-S Overview
This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.The maximum collector current is 8A volts.
BD649-S Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 50mA, 5A
the emitter base voltage is kept at 5V
BD649-S Applications
There are a lot of Bourns Inc.
BD649-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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