BD645-S

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Mfr.Part #
BD645-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 60V 8A TO220
Stock
29,780
In Stock :
29,780

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Collector Base Voltage (VCBO) :
80V
Transistor Type :
NPN - Darlington
Max Power Dissipation :
2W
Number of Elements :
1
Collector Emitter Voltage (VCEO) :
60V
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 50mA, 5A
Element Configuration :
Single
Radiation Hardening :
No
Pin Count :
3
Base Part Number :
BD645
Collector Emitter Saturation Voltage :
2V
Power - Max :
2W
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
1993
Mount :
Through Hole
Max Collector Current :
8A
Mounting Type :
Through Hole
Emitter Base Voltage (VEBO) :
5V
Current - Collector Cutoff (Max) :
500μA
JESD-30 Code :
R-PSFM-T3
ECCN Code :
EAR99
Case Connection :
COLLECTOR
Collector Emitter Breakdown Voltage :
60V
JEDEC-95 Code :
TO-220AB
Polarity :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Operating Temperature :
-65°C~150°C TJ
Number of Terminations :
3
Datasheets
BD645-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BD645-S from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BD645, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-65°C~150°C TJ, Number of Terminations:3, BD645-S pinout, BD645-S datasheet PDF, BD645-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BD645-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BD645-S


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BD645-S Overview


This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2.5V @ 50mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 8A volts is possible.

BD645-S Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 50mA, 5A
the emitter base voltage is kept at 5V


BD645-S Applications


There are a lot of Bourns Inc.
BD645-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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