BD645-S
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- Mfr.Part #
- BD645-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A TO220
- Stock
- 29,780
- In Stock ：
- 29,780
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BD645
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3
- Collector Base Voltage (VCBO) :
- 80V
- Max Collector Current :
- 8A
- Current - Collector Cutoff (Max) :
- 500μA
- Mount :
- Through Hole
- Published :
- 1993
- Max Power Dissipation :
- 2W
- Radiation Hardening :
- No
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Breakdown Voltage :
- 60V
- Operating Temperature :
- -65°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 50mA, 5A
- Mounting Type :
- Through Hole
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Power - Max :
- 2W
- Pin Count :
- 3
- Packaging :
- Tube
- Transistor Type :
- NPN - Darlington
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Saturation Voltage :
- 2V
- Polarity :
- NPN
- JESD-30 Code :
- R-PSFM-T3
- Datasheets
- BD645-S
BD645-S Documents
NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BD645-S Overview
This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2.5V @ 50mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 8A volts is possible.
BD645-S Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 50mA, 5A
the emitter base voltage is kept at 5V
BD645-S Applications
There are a lot of Bourns Inc.
BD645-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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