BD648-S

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Mfr.Part #
BD648-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP DARL 80V 8A TO220
Stock
16,566
In Stock :
16,566

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-220-3
Base Part Number :
BD648
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
2W
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 50mA, 5A
Voltage - Collector Emitter Breakdown (Max) :
80V
Current - Collector Cutoff (Max) :
500μA
Transistor Type :
PNP - Darlington
Emitter Base Voltage (VEBO) :
5V
Operating Temperature :
-65°C~150°C TJ
Max Operating Temperature :
150°C
Collector Emitter Breakdown Voltage :
80V
Number of Elements :
1
Radiation Hardening :
No
Current :
8A
Voltage :
80V
Collector Base Voltage (VCBO) :
100V
Element Configuration :
Single
Supplier Device Package :
TO-220
Polarity :
PNP
Current - Collector (Ic) (Max) :
8A
Collector Emitter Voltage (VCEO) :
80V
Published :
1993
Power - Max :
2W
Mount :
Through Hole
Max Collector Current :
8A
Min Operating Temperature :
-65°C
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Collector Emitter Saturation Voltage :
2V
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BD648-S from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Base Part Number:BD648, Mounting Type:Through Hole, Operating Temperature:-65°C~150°C TJ, Voltage:80V, BD648-S pinout, BD648-S datasheet PDF, BD648-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BD648-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BD648-S


PNP - Darlington -65°C~150°C TJ 500μA 1 Elements TO-220-3 Tube Through Hole

BD648-S Overview


In this device, the DC current gain is 750 @ 3A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 50mA, 5A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Supplier device package TO-220 comes with the product.The device exhibits a collector-emitter breakdown at 80V.Maximum collector currents can be below 8A volts.

BD648-S Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 50mA, 5A
the emitter base voltage is kept at 5V
the supplier device package of TO-220


BD648-S Applications


There are a lot of Bourns Inc.
BD648-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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