BD249B-S

Manufacturer :

Bourns, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN

Polarity/Channel Type :

NPN

Mounting Type :

Through Hole

Number of Terminations :

3

Mount :

Through Hole

Reach Compliance Code :

not_compliant

Collector Emitter Breakdown Voltage :

80V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Power Dissipation :

125W

HTS Code :

8541.29.00.95

Transistor Application :

SWITCHING

Packaging :

Tube

Element Configuration :

Single

Package / Case :

TO-218-3

Vce Saturation (Max) @ Ib, Ic :

4V @ 5A, 25A

Collector Emitter Voltage (VCEO) :

80V

Published :

1993

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Max Collector Current :

25A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 15A 4V

Current - Collector Cutoff (Max) :

1mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Base Part Number :

BD249

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

Number of Elements :

1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Pins :

3

Pin Count :

3

Power - Max :

3W

JESD-609 Code :

e1

Operating Temperature :

-65°C~150°C TJ