BD240CTU
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- Mfr.Part #
- BD240CTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A TO220-3
- Stock
- 2,785
- In Stock ：
- 2,785
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 15
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 100V
- Weight :
- 1.8g
- Power Dissipation :
- 30W
- Pbfree Code :
- yes
- Current Rating :
- -2A
- Packaging :
- Tube
- Current - Collector (Ic) (Max) :
- 2A
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Emitter Base Voltage (VEBO) :
- -5V
- Package / Case :
- TO-220-3
- Current - Collector Cutoff (Max) :
- 300μA
- Transition Frequency :
- 4MHz
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 200mA, 1A
- Max Power Dissipation :
- 30W
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 150V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- -700mV
- Base Part Number :
- BD240
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Max Collector Current :
- 2A
- Collector Emitter Voltage (VCEO) :
- 115V
- Mount :
- Through Hole
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- TO-220AB
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 36 Weeks
- Collector Base Voltage (VCBO) :
- -100V
- Published :
- 2000
- Voltage - Rated DC :
- -100V
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Datasheets
- BD240CTU
BD240CTU Documents
PNP 150°C TJ 300μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
BD240CTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 1A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 4MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 2A volts.
BD240CTU Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 4MHz
BD240CTU Applications
There are a lot of ON Semiconductor
BD240CTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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