BD240C
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- Mfr.Part #
- BD240C
- Manufacturer
- Harris Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- PNP EPITAXIAL SILICON TRANSISTOR
- Stock
- 28,250
- In Stock ：
- 28,250
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- Packaging :
- Tube
- Operating Temperature :
- -65°C~150°C TJ
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 100V
- Power - Max :
- 2W
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Mount :
- Through Hole
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 200mA, 1A
- Collector Emitter Voltage (VCEO) :
- 100V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Published :
- 1993
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Max Collector Current :
- 2A
- Current - Collector Cutoff (Max) :
- 300μA
- Max Power Dissipation :
- 30W
- Power Dissipation :
- 30W
- Base Part Number :
- BD240
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- BD240C
PNP -65°C~150°C TJ 300μA 1 Elements TO-220-3 Tube Through Hole
BD240C-S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 1A 4V.When VCE saturation is 700mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.
BD240C-S Features
the DC current gain for this device is 15 @ 1A 4V
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
BD240C-S Applications
There are a lot of Bourns Inc.
BD240C-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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