BD245C-S
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- Mfr.Part #
- BD245C-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-218-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 10A SOT93
- Stock
- 13,325
- In Stock ：
- 13,325
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Through Hole
- Number of Elements :
- 1
- Package / Case :
- TO-218-3
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Power Dissipation :
- 80W
- Terminal Finish :
- TIN SILVER COPPER
- Transistor Type :
- NPN - Darlington
- JESD-609 Code :
- e1
- Number of Terminations :
- 3
- Max Power Dissipation :
- 80W
- Case Connection :
- COLLECTOR
- Published :
- 1993
- Current - Collector Cutoff (Max) :
- 700µA
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 100V
- Polarity :
- NPN
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 2.5A, 10A
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Part Number :
- BD245
- Power - Max :
- 3W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 4 @ 10A 4V
- Max Collector Current :
- 10A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- BD245C-S
BD245C-S Documents
NPN - Darlington -65°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON TO-218-3 Tube Through Hole
BD245C-S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 4 @ 10A 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 2.5A, 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Collector current can be as low as 10A volts at its maximum.
BD245C-S Features
the DC current gain for this device is 4 @ 10A 4V
the vce saturation(Max) is 4V @ 2.5A, 10A
the emitter base voltage is kept at 5V
BD245C-S Applications
There are a lot of Bourns Inc.
BD245C-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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