BD245B-S

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Mfr.Part #
BD245B-S
Manufacturer
Bourns, Inc.
Package / Case
TO-218-3
Datasheet
Download
Description
TRANS NPN 80V 10A SOT93
Stock
18,917
In Stock :
18,917

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Number of Terminations :
3
Vce Saturation (Max) @ Ib, Ic :
4V @ 2.5A, 10A
Number of Pins :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Collector Emitter Voltage (VCEO) :
80V
Case Connection :
COLLECTOR
Max Collector Current :
10A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-218-3
Current - Collector Cutoff (Max) :
700µA
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Polarity/Channel Type :
NPN
HTS Code :
8541.29.00.95
Emitter Base Voltage (VEBO) :
5V
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Number of Elements :
1
Terminal Finish :
TIN SILVER COPPER
Transistor Type :
NPN
Power - Max :
3W
Pin Count :
3
Element Configuration :
Single
Mount :
Through Hole
Collector Emitter Breakdown Voltage :
80V
JESD-609 Code :
e1
Packaging :
Tube
Published :
1993
Operating Temperature :
-65°C~150°C TJ
Max Power Dissipation :
80W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 3A 4V
Base Part Number :
BD245
Qualification Status :
Not Qualified
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BD245B-S from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Package / Case:TO-218-3, Operating Temperature:-65°C~150°C TJ, Base Part Number:BD245, BD245B-S pinout, BD245B-S datasheet PDF, BD245B-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BD245B-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BD245B-S


NPN -65°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON NPN TO-218-3 Tube Through Hole

BD245B-S Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 3A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 2.5A, 10A.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.

BD245B-S Features


the DC current gain for this device is 20 @ 3A 4V
the vce saturation(Max) is 4V @ 2.5A, 10A
the emitter base voltage is kept at 5V


BD245B-S Applications


There are a lot of Bourns Inc.
BD245B-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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