BD245B-S
- Mfr.Part #
- BD245B-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-218-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 10A SOT93
- Stock
- 18,917
- In Stock :
- 18,917
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- COLLECTOR
- Power - Max :
- 3W
- Current - Collector Cutoff (Max) :
- 700µA
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 2.5A, 10A
- ECCN Code :
- EAR99
- Max Collector Current :
- 10A
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-218-3
- Terminal Finish :
- TIN SILVER COPPER
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BD245
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 3A 4V
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 80W
- Published :
- 1993
- JESD-609 Code :
- e1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 80V
- Operating Temperature :
- -65°C~150°C TJ
- HTS Code :
- 8541.29.00.95
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Packaging :
- Tube
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BD245B-S

NPN -65°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON NPN TO-218-3 Tube Through Hole
BD245B-S Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 3A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 2.5A, 10A.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.
BD245B-S Features
the DC current gain for this device is 20 @ 3A 4V
the vce saturation(Max) is 4V @ 2.5A, 10A
the emitter base voltage is kept at 5V
BD245B-S Applications
There are a lot of Bourns Inc.
BD245B-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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