BD245A-S
- Mfr.Part #
- BD245A-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-218-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 10A SOT93
- Stock
- 12,975
- In Stock :
- 12,975
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- TIN SILVER COPPER
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 3A 4V
- Package / Case :
- TO-218-3
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- 10A
- Power - Max :
- 3W
- Operating Temperature :
- -65°C~150°C TJ
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 60V
- Max Collector Current :
- 10A
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 2.5A, 10A
- Current - Collector Cutoff (Max) :
- 700µA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e1
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 80W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 1993
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Base Part Number :
- BD245
- Power Dissipation :
- 80W
- Transistor Application :
- SWITCHING
- Datasheets
- BD245A-S
BD245A-S Documents

NPN -65°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON NPN TO-218-3 Tube Through Hole
BD245A-S Overview
In this device, the DC current gain is 20 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 4V @ 2.5A, 10A.Maintaining the continuous collector voltage at 10A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Maximum collector currents can be below 10A volts.
BD245A-S Features
the DC current gain for this device is 20 @ 3A 4V
the vce saturation(Max) is 4V @ 2.5A, 10A
the emitter base voltage is kept at 5V
BD245A-S Applications
There are a lot of Bourns Inc.
BD245A-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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