BD245A-S
- Mfr.Part #
- BD245A-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-218-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 10A SOT93
- Stock
- 12,975
- In Stock :
- 12,975
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 10A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Base Part Number :
- BD245
- Mount :
- Through Hole
- Number of Pins :
- 3
- Max Power Dissipation :
- 80W
- Published :
- 1993
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 2.5A, 10A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 3A 4V
- Number of Terminations :
- 3
- Package / Case :
- TO-218-3
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 3W
- Terminal Finish :
- TIN SILVER COPPER
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 700µA
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 80W
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Type :
- NPN
- JESD-609 Code :
- e1
- Mounting Type :
- Through Hole
- Max Collector Current :
- 10A
- Packaging :
- Tube
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- BD245A-S

NPN -65°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON NPN TO-218-3 Tube Through Hole
BD245A-S Overview
In this device, the DC current gain is 20 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 4V @ 2.5A, 10A.Maintaining the continuous collector voltage at 10A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Maximum collector currents can be below 10A volts.
BD245A-S Features
the DC current gain for this device is 20 @ 3A 4V
the vce saturation(Max) is 4V @ 2.5A, 10A
the emitter base voltage is kept at 5V
BD245A-S Applications
There are a lot of Bourns Inc.
BD245A-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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