BD244CTU

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Mfr.Part #
BD244CTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 100V 6A TO220-3
Stock
6
In Stock :
6

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Element Configuration :
Single
Operating Temperature :
150°C TJ
Emitter Base Voltage (VEBO) :
-5V
Transistor Application :
SWITCHING
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1A, 6A
Factory Lead Time :
8 Weeks
Package / Case :
TO-220-3
hFE Min :
15
Continuous Collector Current :
-10A
Power - Max :
65W
Current - Collector Cutoff (Max) :
700µA
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Max Collector Current :
6A
Mounting Type :
Through Hole
Transition Frequency :
3MHz
Collector Base Voltage (VCBO) :
-100V
Collector Emitter Saturation Voltage :
-1.5V
Number of Elements :
1
Case Connection :
COLLECTOR
Collector Emitter Breakdown Voltage :
100V
Collector Emitter Voltage (VCEO) :
1.5V
Mount :
Through Hole
Packaging :
Tube
Number of Terminations :
3
Transistor Type :
PNP
Max Power Dissipation :
65W
JESD-30 Code :
R-PSFM-T3
Polarity/Channel Type :
PNP
JEDEC-95 Code :
TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 3A 4V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Weight :
1.8g
Introducing Transistors - Bipolar (BJT) - Single onsemi BD244CTU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Terminations:3, BD244CTU pinout, BD244CTU datasheet PDF, BD244CTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD244CTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD244CTU


PNP 150°C TJ 700μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole

BD244CTU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 3A 4V.With a collector emitter saturation voltage of -1.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 1A, 6A.In order to achieve high efficiency, the continuous collector voltage should be kept at -10A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A transition frequency of 3MHz is present in the part.Collector current can be as low as 6A volts at its maximum.

BD244CTU Features


the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 1A, 6A
the emitter base voltage is kept at -5V
a transition frequency of 3MHz


BD244CTU Applications


There are a lot of ON Semiconductor
BD244CTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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