BD244CTU
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- Mfr.Part #
- BD244CTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 6A TO220-3
- Stock
- 6
- In Stock ：
- 6
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Max Power Dissipation :
- 65W
- Emitter Base Voltage (VEBO) :
- -5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Max Collector Current :
- 6A
- JEDEC-95 Code :
- TO-220AB
- Power - Max :
- 65W
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Factory Lead Time :
- 8 Weeks
- Case Connection :
- COLLECTOR
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- hFE Min :
- 15
- Transition Frequency :
- 3MHz
- Current - Collector Cutoff (Max) :
- 700µA
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PSFM-T3
- Continuous Collector Current :
- -10A
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 6A
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- -1.5V
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- -100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3
- Collector Emitter Breakdown Voltage :
- 100V
- Weight :
- 1.8g
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Element Configuration :
- Single
- Datasheets
- BD244CTU
PNP 150°C TJ 700μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
BD244CTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 3A 4V.With a collector emitter saturation voltage of -1.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 1A, 6A.In order to achieve high efficiency, the continuous collector voltage should be kept at -10A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A transition frequency of 3MHz is present in the part.Collector current can be as low as 6A volts at its maximum.
BD244CTU Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 1A, 6A
the emitter base voltage is kept at -5V
a transition frequency of 3MHz
BD244CTU Applications
There are a lot of ON Semiconductor
BD244CTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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