BD244C
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- Mfr.Part #
- BD244C
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 6A TO220-3
- Stock
- 6,145
- In Stock ：
- 6,145
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 6A
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 100V
- Max Breakdown Voltage :
- 100V
- Surface Mount :
- No
- hFE Min :
- 30
- Gain Bandwidth Product :
- 3MHz
- Frequency :
- 3MHz
- Current Rating :
- -6A
- JEDEC-95 Code :
- TO-220AB
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 700µA
- Power Dissipation :
- 65W
- Base Part Number :
- BD244
- Number of Pins :
- 3
- Package / Case :
- TO-220-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 50V
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 6A
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Max Power Dissipation :
- 65W
- Transition Frequency :
- 3MHz
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- Voltage - Rated DC :
- -100V
- Factory Lead Time :
- 6 Weeks
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 1.5V
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2004
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Datasheets
- BD244C
PNP -65°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
BD244CG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 1A, 6A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -6A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.
BD244CG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 6A
the emitter base voltage is kept at 5V
the current rating of this device is -6A
a transition frequency of 3MHz
BD244CG Applications
There are a lot of ON Semiconductor
BD244CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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