BD244B
- Mfr.Part #
- BD244B
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 6A TO220
- Stock
- 34,599
- In Stock :
- 34,599
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 65W
- Packaging :
- Tube
- Current - Collector Cutoff (Max) :
- 700µA
- Frequency :
- 3MHz
- hFE Min :
- 30
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -6A
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 80V
- Number of Pins :
- 3
- Max Power Dissipation :
- 65W
- Base Part Number :
- BD244
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 80V
- Surface Mount :
- No
- Voltage - Rated DC :
- -80V
- Collector Emitter Saturation Voltage :
- 1.5V
- Factory Lead Time :
- 2 Weeks
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- ECCN Code :
- EAR99
- Max Collector Current :
- 6A
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 6A
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2007
- Pin Count :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 3MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Transistor Type :
- PNP
- JEDEC-95 Code :
- TO-220AB
- Transition Frequency :
- 3MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- BD244B

PNP -65°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
BD244BG Overview
In this device, the DC current gain is 15 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 1A, 6A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-6A).3MHz is present in the transition frequency.Maximum collector currents can be below 6A volts.
BD244BG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 6A
the emitter base voltage is kept at 5V
the current rating of this device is -6A
a transition frequency of 3MHz
BD244BG Applications
There are a lot of ON Semiconductor
BD244BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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