BD243C
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- Mfr.Part #
- BD243C
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A TO220
- Stock
- 29,583
- In Stock ：
- 29,583
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- -65°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 65W
- Collector Emitter Breakdown Voltage :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Tin
- Max Collector Current :
- 6A
- Number of Elements :
- 1
- Base Part Number :
- BD243
- Collector Base Voltage (VCBO) :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Frequency :
- 3MHz
- REACH SVHC :
- No SVHC
- Surface Mount :
- No
- JEDEC-95 Code :
- TO-220AB
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Published :
- 2004
- Width :
- 4.82mm
- Collector Emitter Voltage (VCEO) :
- 100V
- Length :
- 10.28mm
- Voltage - Rated DC :
- 100V
- Gain Bandwidth Product :
- 3MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Element Configuration :
- Single
- Height :
- 15.75mm
- Power Dissipation :
- 65W
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 6A
- Current Rating :
- 6A
- Factory Lead Time :
- 6 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Current - Collector Cutoff (Max) :
- 700µA
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- hFE Min :
- 30
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Packaging :
- Tube
- Collector Emitter Saturation Voltage :
- 1.5V
- Transition Frequency :
- 3MHz
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Datasheets
- BD243C
NPN -65°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD243CG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1A, 6A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 6A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 6A volts.
BD243CG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
BD243CG Applications
There are a lot of ON Semiconductor
BD243CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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