BD243C
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- Mfr.Part #
- BD243C
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A TO220
- Stock
- 29,583
- In Stock ：
- 29,583
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 65W
- Polarity/Channel Type :
- NPN
- Packaging :
- Tube
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- hFE Min :
- 30
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 700µA
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Power Dissipation :
- 65W
- Base Part Number :
- BD243
- Current Rating :
- 6A
- Height :
- 15.75mm
- Length :
- 10.28mm
- Max Collector Current :
- 6A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 100V
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 100V
- Width :
- 4.82mm
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Transition Frequency :
- 3MHz
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-220-3
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 100V
- Published :
- 2004
- Factory Lead Time :
- 6 Weeks
- Mounting Type :
- Through Hole
- Case Connection :
- COLLECTOR
- Pbfree Code :
- yes
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 3MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Gain Bandwidth Product :
- 3MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 6A
- Collector Emitter Saturation Voltage :
- 1.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~150°C TJ
- Pin Count :
- 3
- Datasheets
- BD243C
BD243C Documents
NPN -65°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD243CG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1A, 6A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 6A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 6A volts.
BD243CG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
BD243CG Applications
There are a lot of ON Semiconductor
BD243CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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