BD243C
- Mfr.Part #
- BD243C
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 6A TO220-3
- Stock
- 32,444
- In Stock :
- 32,444
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JEDEC-95 Code :
- TO-220AB
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Length :
- 10.28mm
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- hFE Min :
- 30
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 6A
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Base Voltage (VCBO) :
- 100V
- Voltage - Rated DC :
- 100V
- Pbfree Code :
- yes
- Max Power Dissipation :
- 65W
- Current Rating :
- 6A
- Package / Case :
- TO-220-3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 6A
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Base Part Number :
- BD243
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 1.5V
- Height :
- 15.75mm
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 6 Weeks
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 3MHz
- Number of Elements :
- 1
- Frequency :
- 3MHz
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Type :
- NPN
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Surface Mount :
- No
- Published :
- 2004
- ECCN Code :
- EAR99
- Power Dissipation :
- 65W
- Gain Bandwidth Product :
- 3MHz
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 700µA
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Width :
- 4.82mm
- Datasheets
- BD243C

NPN -65°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD243CG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1A, 6A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 6A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 6A volts.
BD243CG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
BD243CG Applications
There are a lot of ON Semiconductor
BD243CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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