BD242CG
- Mfr.Part #
- BD242CG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A TO220
- Stock
- 6,630
- In Stock :
- 6,630
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Voltage - Rated DC :
- -100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- hFE Min :
- 25
- Power Dissipation :
- 40mW
- Collector Base Voltage (VCBO) :
- 115V
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 300μA
- Published :
- 2004
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-220-3
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Power - Max :
- 40W
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Base Part Number :
- BD242
- Gain Bandwidth Product :
- 3MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 600mA, 3A
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Number of Elements :
- 1
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Frequency :
- 3MHz
- Surface Mount :
- No
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Operating Temperature :
- -65°C~150°C TJ
- Max Power Dissipation :
- 40W
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Breakdown Voltage :
- 100V
- Contact Plating :
- Tin
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Max Collector Current :
- 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 4V
- Collector Emitter Saturation Voltage :
- 1.2V
- Factory Lead Time :
- 6 Weeks
- Current Rating :
- -3A
- Transition Frequency :
- 3MHz
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Datasheets
- BD242CG

PNP -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
BD242CG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 1A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 3A volts.
BD242CG Features
the DC current gain for this device is 25 @ 1A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
BD242CG Applications
There are a lot of ON Semiconductor
BD242CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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