BD242C

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 600mA, 3A

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Voltage (VCEO) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Transition Frequency :

3MHz

Power Dissipation :

40mW

Gain Bandwidth Product :

3MHz

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Published :

2004

Lead Free :

Lead Free

Number of Terminations :

3

REACH SVHC :

No SVHC

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 1A 4V

Collector Emitter Saturation Voltage :

1.2V

Collector Emitter Breakdown Voltage :

100V

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Through Hole

Radiation Hardening :

No

Case Connection :

COLLECTOR

Pbfree Code :

yes

ECCN Code :

EAR99

Polarity/Channel Type :

PNP

Surface Mount :

No

Factory Lead Time :

6 Weeks

Peak Reflow Temperature (Cel) :

260

hFE Min :

25

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Base Part Number :

BD242

Max Collector Current :

3A

Current Rating :

-3A

Packaging :

Tube

Pin Count :

3

Contact Plating :

Tin

Current - Collector Cutoff (Max) :

300μA

Frequency :

3MHz

Collector Base Voltage (VCBO) :

115V

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Element Configuration :

Single

Transistor Type :

PNP

Max Power Dissipation :

40W

Transistor Application :

SWITCHING

Power - Max :

40W

Voltage - Rated DC :

-100V

Package / Case :

TO-220-3