BD242BG
- Mfr.Part #
- BD242BG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 3A TO220
- Stock
- 39,411
- In Stock :
- 39,411
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 3MHz
- Transistor Type :
- PNP
- Current Rating :
- -3A
- hFE Min :
- 25
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Package / Case :
- TO-220-3
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 300μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 3MHz
- Operating Temperature :
- -65°C~150°C TJ
- Radiation Hardening :
- No
- JEDEC-95 Code :
- TO-220AB
- ECCN Code :
- EAR99
- Base Part Number :
- BD242
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 80V
- Published :
- 2001
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 1.2V
- Pin Count :
- 3
- Voltage - Rated DC :
- -80V
- Element Configuration :
- Single
- Surface Mount :
- No
- Max Collector Current :
- 3A
- Collector Emitter Voltage (VCEO) :
- 80V
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Power Dissipation :
- 40mW
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 600mA, 3A
- Power - Max :
- 40W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Max Power Dissipation :
- 40W
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 4V
- Mounting Type :
- Through Hole
- Frequency :
- 3MHz
- Collector Base Voltage (VCBO) :
- 115V
- Factory Lead Time :
- 2 Weeks
- Datasheets
- BD242BG

PNP -65°C~150°C TJ 300μA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
BD242BG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 600mA, 3A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 3A volts.
BD242BG Features
the DC current gain for this device is 25 @ 1A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
BD242BG Applications
There are a lot of ON Semiconductor
BD242BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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