BD241CTU
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- Mfr.Part #
- BD241CTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TO220-3
- Stock
- 175
- In Stock ：
- 175
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JEDEC-95 Code :
- TO-220AB
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 4V
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 600mA, 3A
- Contact Plating :
- Tin
- Transition Frequency :
- 3MHz
- Package / Case :
- TO-220-3
- Current - Collector Cutoff (Max) :
- 300μA
- Factory Lead Time :
- 6 Weeks
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- LIFETIME (Last Updated: 1 week ago)
- Width :
- 4.5mm
- Element Configuration :
- Single
- Power Dissipation :
- 40W
- Base Part Number :
- BD241
- Packaging :
- Tube
- Published :
- 2000
- Length :
- 9.2mm
- Max Collector Current :
- 3A
- Collector Emitter Saturation Voltage :
- 1.2V
- Transistor Element Material :
- SILICON
- hFE Min :
- 10
- Collector Base Voltage (VCBO) :
- 100V
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 40W
- Collector Emitter Voltage (VCEO) :
- 100V
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 100V
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Height :
- 14.2mm
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Current Rating :
- 3A
- Weight :
- 1.8g
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Datasheets
- BD241CTU
BD241CTU Documents
NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD241CTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 1A 4V DC current gain.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 3A volts.
BD241CTU Features
the DC current gain for this device is 25 @ 1A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD241CTU Applications
There are a lot of ON Semiconductor
BD241CTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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