BD241CG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

SWITCHING

Contact Plating :

Tin

Collector Emitter Saturation Voltage :

1.2V

Operating Temperature :

-65°C~150°C TJ

Number of Elements :

1

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

300μA

Max Power Dissipation :

40W

Number of Pins :

3

Transistor Element Material :

SILICON

Radiation Hardening :

No

Base Part Number :

BD241

Power Dissipation :

40mW

Collector Base Voltage (VCBO) :

90V

JESD-609 Code :

e3

Mounting Type :

Through Hole

Factory Lead Time :

2 Weeks

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Voltage - Rated DC :

100V

Frequency :

3MHz

Published :

2010

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 600mA, 3A

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 1A 4V

Transition Frequency :

3MHz

ECCN Code :

EAR99

hFE Min :

25

Polarity/Channel Type :

NPN

Transistor Type :

NPN

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Case Connection :

COLLECTOR

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

3A

Pbfree Code :

yes

Pin Count :

3

Packaging :

Tube

Current Rating :

3A

Collector Emitter Breakdown Voltage :

100V

Time@Peak Reflow Temperature-Max (s) :

40

Gain Bandwidth Product :

3MHz

Collector Emitter Voltage (VCEO) :

100V

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single